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4GB SATA RAM, not harddrive!

February 7, 2008

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Always getting tired of the slow harddrive, heres the solution Gigabyte i-RAM.

Product Introduction
Through GIGABYTE’s custom intelligent controller, i-RAM acts like a regular SATA hard drive at theoretically 1.5Gb/s data transfer rate. By utilizing conventional DDR memory modules, i-RAM is outfitted with four 184-pin DIMM slots that will accept any DDR DIMM and support up to 4GB unbuffered / non-ECC memory. Most of all, the major issue of data lost after powering down is solved by i-RAM’s backup battery which is charged by your system on the fly. Furthermore, the 4-level LED located in the lower left corner indicates the i-RAM battery capacity. Without mechanical elements of traditional hard disks, i-RAM’s stunning performance coming from the nature of DRAM as storage medium benefits in massive storage access application such as video / audio capture & editing and 3D graphics design applications. i-RAM is the fastest storage device you have ever imagined !
 
Power Interface

PCI 2.2 mechanical compliant slot
Support PCI 3V & 5V Slot
 
Data Transfer Interface
One onboard SATA connector supports 1.5Gb/s data transfer rate
 
Memory Interface

Memory Slot : 4 DIMMs
Memory Type : Unbuffered / Non-ECC DDR 200/266/333/400MHz
Memory Capacity : 4GB
Memory Height : up to 4.2mm
*Click the “Recommend Memory List” for details. 
 
Backup Battery
One 1,600mAh lithium battery
 
Battery Capacity Indicator

4-level LED battery capacity indicator
One red battery capacity indicator button
 
Form Factor
22 x 10.4cm
 
System Requirement

One available PCI 2.2 compliant slot
One available SATA 1.5Gb/s compliant connector
GIGABYTE Motherboards based on the following chipsets:

Intel : ICH6 / ICH7 / ICH8 / ICH9 series
VIA : 8237R/8237R+/8237A
SiS : 964
NVIDIA : NF4 SLI / NF4 4X / NF4 SLI Intel Edition + MCP04
ULi : M1689

First Phase Change Memory Prototypes

February 7, 2008

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Intel Corporation and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new, innovative memory technology called Phase Change Memory (PCM). The prototypes are the first functional silicon to be delivered to customers for evaluation, bringing the technology one step closer to adoption.

The memory device, codenamed “Alverstone” uses PCM, a promising new memory technology providing very fast read and write speeds at lower power than conventional flash, and allows for bit alterability normally seen in RAM. PCM has long been a topic of discussion for research and development, and with “Alverstone,” Intel and STMicroelectronics are helping to move the technology into the marketplace.

“This is the most significant non-volatile memory advancement in 40 years,” said Ed Doller, chief technology officer-designate of Numonyx, the new name for the pending STMicroelectronics and Intel flash memory company. “There have been plenty of attempts to find and develop new non-volatile memory technologies, yet of all the concepts, PCM provides the most compelling solution – and Intel and STMicroelectronics are delivering PCM into the hands of customers today. This is an important milestone for the industry and for our companies.”

In related news, Intel and STMicroelectronics technologists presented a research paper this week at the International Solid States Circuits Conference (ISSCC) describing yet another breakthrough in PCM technology. Together, the companies created the world’s first demonstrable high-density, multi-level cell (MLC) large memory device using PCM technology. The move from single bit per cell to MLC also brings significantly higher density at a lower cost per Mbyte making the combination of MLC and PCM a powerful development.

In 2003, Intel and STMicroelectronics formed a joint development program (JDP) to focus on Phase Change Memory development. Previously the JDP demonstrated 8Mb memory arrays on 180nm at the 2004 VLSI conference and first disclosed the Alverstone 90nm 128Mbit memory device at the 2006 VLSI Symposium. Alverstone and future JDP products will become part of Numonyx, a new independent semiconductor company created through an agreement between STMicroelectronics, Intel and Francisco Partners signed in May 2007. The new company’s strategic focus will be on supplying complete memory solutions for a variety of consumer and industrial devices, including cellular phones, MP3 players, digital cameras, computers and other high-tech equipment. The companies are scheduled to close the transaction in the first quarter of 2008.

In 2007, the combined memory market for DRAM, flash, and other memory products such as EEPROM was US$61 billion, according to the industry research firm Web-Feet Research, Inc. Memory technology cost declines have traditionally been driven at the rate of “Moore’s Law,” where density doubles every 18 months with each lithography shrink. As RAM and flash technologies run into scaling limitations over the next decade, PCM costs will decline at a faster rate. The advent of multi-level-cell PCM will further accelerate the cost per bit crossover of PCM technology relative to today’s technologies. Finally, by combining the bit-alterability of DRAM, the non-volatility of flash, the fast reads of NOR and the fast writes of NAND, PCM has the ability to address the entire memory market and be a key driver for future growth over the next decade.

Alverstone is a 128Mb device built on 90nm and is intended to allow memory customers to evaluate PCM features, allowing cellular and embedded customers to learn more about PCM and how it can be incorporated into their future system designs.

SanDisk Launches High-Definition Video Flash Card Line for New Digital Camcorders

January 29, 2008

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Consumers who own camcorders that use flash memory cards instead of tape will now be able to select the right storage media for their cameras with the debut of a video card line from SanDisk Corporation (NASDAQ: SNDK). As the first of a new category of storage media, SanDisk Video HD™ ccards will be available in SDHC™ (high-capacity) and Memory Stick PRO Duo™ formats, and will be identified by minutes of recording time as well as by capacity.

SanDisk unveiled the high performance video card product family during a press conference at the Consumer Electronics Show, where the company is exhibiting at Booth 30768 in South Hall 3 of the Las Vegas Convention Center.

“The SanDisk Video HD line takes the mystery out of selecting the proper memory for these new camcorders,” said Susan Park, senior product marketing manager for SanDisk’s Cards and Accessories Division. “The bright red packaging and the bold labeling of recording times give consumers an easy way to select memory cards for video.” The cards are designed to be high performance and optimized for high-definition camcorders, but they can also be used in recording standard video. Further, the cards work well in point-and-shoot digital still cameras that have video capabilities, she added.

“Until now, it has been difficult for consumers to select the memory card that is the most suitable for their camcorders, and equally difficult to calculate the amount of recording time they have available from the various resolution settings,” said Park. Echoing the familiar messaging of analog video tape, the SanDisk Video HD card packaging offers a chart that shows the approximate number of minutes for HD High, HD Standard and HD Extended settings.

SanDisk Video HD cards exceed the performance required by high definition camcorders, making them ideal for 1080 High Definition recording. They also feature a fast read speed, making for efficient transfer speeds to a personal computer and giving them a “best in class” performance for video cards.

The concept of launching a new product category is being driven by the proliferation of HD-capable flash-memory-based camcorders and hybrid camcorders that contain both hard drives and card slots. Offered by manufacturers such as Sanyo, Sony, Panasonic and JVC, many of them are under $1,000 and come in compact sizes that make them easy to carry.

The market for flash-enabled camcorders is expected to grow in popularity. Research company IDC predicts that by 2011, some 37 percent of global camcorder shipments will be models that record onto memory cards, and well over half of camcorders will feature HD video capture. “With HD video quickly penetrating the category, it will be critical for vendors to provide seamless recording experiences,” said Christopher Chute, research manager of IDC’s worldwide digital imaging practice. “The SanDisk Video HD card is well-positioned to service this expanding market by simplifying the memory message for consumers,” he added.

The SanDisk Video HD cards are expected to be available starting in March for North America and shortly afterwards for Europe. They will be offered in 60-minute* (4GB) and 120-minute* (8GB) times – on the HD Standard setting – for both SDHC and Memory Stick PRO Duo formats. Suggested retail prices are $79.99 and $139.99, respectively, for the 4GB and 8GB SDHC cards, and $79.99 and $149.99, respectively, for the Memory Stick PRO Duo cards. Retailers have indicated that the cards will be displayed at or near digital camcorders.

Another feature: The cards come with jewel cases and labels so that users can identify and store their valued videos.

Approximate Recording Time*

SanDisk
 Video HD
   13Mbps*
  HD High
 9Mbps*
 HD Standard
 6Mbps*
 HD Extended  
 SD 4GB
8GB
 40 min*
 80 min*
 60 min*
 120 min*
 90 min*
 180 min*
     15Mbps*
 HD High
 9Mbps*
 HD Standard
 5Mbps*
 HD Extended
 MSPD 4GB
8GB
 30 min*
 60 min*
 60 min*
 120 min*
 90 min*
180 min*

Buffalo makes Apple memory in 800MHz for Mac Pro and Xserver

January 23, 2008

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Buffalo Introduces New TechWorks 800MHz FBDIMM Memory for Apple’s Newest Mac Pros and Xserves

Buffalo Technology, a global leader in the design, development and manufacturing of innovative memory solutions, announced today it has expanded its high-performance line of Apple memory products to include TechWorks 800MHz DDR2 fully buffered ECC modules. These modules are designed specifically for the new Apple Mac Pro and Xserve utilizing Intel’s Xeon quad-core processors.

TechWorks memory by Buffalo has been the leading memory upgrade solution for Apple computers since 1986, and was the first memory to include a lifetime warranty. As a long-standing Premier Apple Developer, Buffalo has first-hand access to Apple technical and business resources. With this knowledge Buffalo was able to design the TechWorks 800MHz FBDIMM modules to meet the new specifications Apple has set for the Mac Pro and Xserve. These specifications include an advanced FBDIMM heat sink that enables accelerated cooling features for the Mac Pro to minimize air flow requirements which, in turn, decreases fan speeds and overall case temperature.

The new TechWorks 800MHz FBDIMMs are available in 2GB, 4GB and 8GB kits for the new Apple Mac Pro, allowing the user to upgrade their memory from 2GBs up to 16GBs. For the Xserves, the 800MHz FBDIMMs come in 2GB and 4GB kits, and also upgrades the memory from 2GBs up to 16GBs. Both the new Mac Pro and Xserve can operate with a 256bit memory bus (quad channel) if four identical modules or more of memory are installed together; otherwise the memory bus runs at 128bits (dual channel).

“As Apple continues to set high standards for the computer industry, Buffalo continues to support the Apple market by matching these standards with our top-quality memory upgrades,” Kerry Morris, Buffalo’s Memory Director said. He further added, “Users should definitely take advantage of the 256bit memory bus by installing four or more of our new TechWorks FBDIMM modules to achieve optimal system performance.”

All TechWorks memory is guaranteed compatible to ensure customer satisfaction; and in addition to the lifetime warranty.

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